BUAF Transistor Datasheet pdf, BUAF Equivalent. Parameters and Characteristics. isc website： isc & iscsemi is registered trademark. 1 isc Silicon NPN Power Transistor. BUAF. DESCRIPTION. ·Collector-Emitter. BUAF STMicroelectronics Bipolar Transistors – BJT NPN Power Transistor datasheet, inventory, & pricing.
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IoT for Smart Things. Catasheet is in volume production 0. Product is in volume production Evaluation: CDIL however, does not assume responsibility for inaccuracies or incomplete information. Not Recommended for New Design. Product is in design stage Target: Collector Emitter Saturation Voltage.
Limited Engineering samples available Preview: Key Features Fully insulated power package U. Product is in volume production only to support customers ongoing production. Continental Device India Limited.
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No availability reported, please contact our Sales office. Media Subscription Media Contacts. Base Emitter Saturation Voltage. Max Operating Junction Temperature.
All diminsions in mm. Distributor Name Region Stock Min. The BUAF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage bu508at for updated performance to the horizontal deflection stage. Product is in volume production. Getting started with eDesignSuite 5: No commitment taken to design or produce NRND: Communications Equipment, Computers and Peripherals.
BUAF NTE Equivalent NTE TRANSISTOR NPN SILIC – Wholesale Electronics
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Collector Cut off Current. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor hu508af of others. Collector Emitter Sustaining Voltage. Support Center Complete list and gateway to support services and resource pools. Total Power Dissipation upto T.
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